FDP33N25

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-220-3
MOSFET 250V N-Channel MOSFET
Date Sheet

在庫數 500

1+： $2.26900
10+： $2.14056
100+： $2.01940
500+： $1.90509
1000+： $1.79726

小計金額 $2.26900

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 3 days ago)
Factory Lead Time：6 Weeks
Contact Plating：Tin
Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-220-3
Number of Pins：3
Weight：1.8g
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：33A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：235W Tc
Turn Off Delay Time：75 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tube
Series：UniFET™
Published：2004
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Resistance：94MOhm
Additional Feature：AVALANCHE RATED
Voltage - Rated DC：250V
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Current Rating：33A
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：235W
Turn On Delay Time：35 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：94m Ω @ 16.5A, 10V
Vgs(th) (Max) @ Id：5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：2135pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：48nC @ 10V
Rise Time：230ns
Vgs (Max)：±30V
Fall Time (Typ)：120 ns
Continuous Drain Current (ID)：33A
Threshold Voltage：5V
JEDEC-95 Code：TO-220AB
Gate to Source Voltage (Vgs)：30V
Drain to Source Breakdown Voltage：250V
Height：9.4mm
Length：10.67mm
Width：4.83mm
REACH SVHC：No SVHC
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 500

1+： $2.26900
10+： $2.14056
100+： $2.01940
500+： $1.90509
1000+： $1.79726

小計金額 $2.26900

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FDP33N25