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在庫數 79999

  • 1+: $1.63515
  • 10+: $1.54259
  • 100+: $1.45528
  • 500+: $1.37290
  • 1000+: $1.29519

小計金額 $1.63515

仕様 よくある質問
  • Factory Lead Time:12 Weeks
  • Mount:Through Hole
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Number of Pins:3
  • Weight:4.535924g
  • Transistor Element Material:SILICON
  • Current - Continuous Drain (Id) @ 25℃:50A Tc
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Number of Elements:1
  • Power Dissipation (Max):150W Tc
  • Turn Off Delay Time:54 ns
  • Voltage - Gate Threshold (Vgs(th)) (Max) @ Id:4V @ 250μA
  • Operating Temperature:-55°C~175°C TJ
  • Packaging:Tube
  • Series:STripFET™ II
  • JESD-609 Code:e3
  • Part Status:ACTIVE (Last Updated: 8 months ago)
  • Moisture Sensitivity Level (MSL):1 (Unlimited)
  • Number of Terminations:3
  • ECCN Code:EAR99
  • Resistance:33mOhm
  • Terminal Finish:Matte Tin (Sn)
  • Voltage - Rated DC:100V
  • Current Rating:50A
  • Base Part Number:STP40N
  • Element Configuration:Single
  • Operating Mode:ENHANCEMENT MODE
  • Power Dissipation:150W
  • Turn On Delay Time:21 ns
  • FET Type:N-Channel
  • Transistor Application:SWITCHING
  • Rds On (Max) @ Id, Vgs:28m Ω @ 25A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds:2180pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs:62nC @ 10V
  • Rise Time:63ns
  • Vgs (Max):±20V
  • Fall Time (Typ):28 ns
  • Continuous Drain Current (ID):50A
  • Threshold Voltage:3V
  • JEDEC-95 Code:TO-220AB
  • Gate to Source Voltage (Vgs):20V
  • Drain Current-Max (Abs) (ID):40A
  • Drain to Source Breakdown Voltage:100V
  • Pulsed Drain Current-Max (IDM):200A
  • Height:9.15mm
  • Length:10.4mm
  • Width:4.6mm
  • REACH SVHC:No SVHC
  • Radiation Hardening:No
  • RoHS Status:ROHS3 Compliant
  • Lead Free:Lead Free

在庫數 79999

  • 1+: $1.63515
  • 10+: $1.54259
  • 100+: $1.45528
  • 500+: $1.37290
  • 1000+: $1.29519

小計金額 $1.63515

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