FQPF8N80C

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-220-3 Full Pack
MOSFET N-CH 800V 8A TO-220F
Date Sheet

在庫數 174

1+： $3.35048
10+： $3.16083
100+： $2.98192
500+： $2.81313
1000+： $2.65390

小計金額 $3.35048

仕様よくある質問

Factory Lead Time：8 Weeks
Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-220-3 Full Pack
Number of Pins：3
Weight：2.27g
Transistor Element Material：SILICON
Number of Elements：1
Power Dissipation (Max)：59W Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Current - Continuous Drain (Id) @ 25℃：8A Tc
Turn Off Delay Time：65 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：5V @ 250μA
Operating Temperature：-55°C~150°C TJ
Packaging：Tube
Series：QFET®
Published：2003
JESD-609 Code：e3
Pbfree Code：yes
Part Status：ACTIVE (Last Updated: 3 days ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Resistance：1.55Ohm
Terminal Finish：Tin (Sn)
Voltage - Rated DC：800V
Current Rating：8A
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：59W
Case Connection：ISOLATED
Turn On Delay Time：40 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：1.55 Ω @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds：2050pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：45nC @ 10V
Rise Time：110ns
Vgs (Max)：±30V
Fall Time (Typ)：70 ns
Continuous Drain Current (ID)：8A
Threshold Voltage：5V
JEDEC-95 Code：TO-220AB
Gate to Source Voltage (Vgs)：30V
Drain Current-Max (Abs) (ID)：8A
Drain to Source Breakdown Voltage：800V
Avalanche Energy Rating (Eas)：850 mJ
Height：9.19mm
Length：10.16mm
Width：4.7mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 174

1+： $3.35048
10+： $3.16083
100+： $2.98192
500+： $2.81313
1000+： $2.65390

小計金額 $3.35048

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FQPF8N80C