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STP8NK80ZFP

在庫數 1000

  • 1+: $3.55412
  • 10+: $3.35294
  • 100+: $3.16315
  • 500+: $2.98411
  • 1000+: $2.81520

小計金額 $3.55412

仕様 よくある質問
  • Factory Lead Time:12 Weeks
  • Package / Case:TO-220-3 Full Pack
  • Mount:Through Hole
  • Mounting Type:Through Hole
  • Number of Pins:3
  • Transistor Element Material:SILICON
  • Power Dissipation (Max):30W Tc
  • Turn Off Delay Time:48 ns
  • Voltage - Gate Threshold (Vgs(th)) (Max) @ Id:4.5V @ 100μA
  • Current - Continuous Drain (Id) @ 25℃:6.2A Tc
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Number of Elements:1
  • Packaging:Tube
  • Series:SuperMESH™
  • Operating Temperature:-55°C~150°C TJ
  • JESD-609 Code:e3
  • Part Status:Active
  • Moisture Sensitivity Level (MSL):1 (Unlimited)
  • Number of Terminations:3
  • ECCN Code:EAR99
  • Resistance:1.5Ohm
  • Terminal Finish:Matte Tin (Sn)
  • Base Part Number:STP8N
  • Element Configuration:Single
  • Operating Mode:ENHANCEMENT MODE
  • Power Dissipation:30W
  • Case Connection:ISOLATED
  • Turn On Delay Time:17 ns
  • FET Type:N-Channel
  • Transistor Application:SWITCHING
  • Rds On (Max) @ Id, Vgs:1.5 Ω @ 3.1A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds:1320pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs:46nC @ 10V
  • Rise Time:30ns
  • Vgs (Max):±30V
  • Fall Time (Typ):28 ns
  • Continuous Drain Current (ID):6.2A
  • Threshold Voltage:3.75V
  • JEDEC-95 Code:TO-220AB
  • Gate to Source Voltage (Vgs):30V
  • Drain to Source Breakdown Voltage:800V
  • Pulsed Drain Current-Max (IDM):24.8A
  • Width:4.6mm
  • Height:16.4mm
  • Length:10.4mm
  • REACH SVHC:No SVHC
  • Radiation Hardening:No
  • RoHS Status:ROHS3 Compliant
  • Lead Free:Lead Free

在庫數 1000

  • 1+: $3.55412
  • 10+: $3.35294
  • 100+: $3.16315
  • 500+: $2.98411
  • 1000+: $2.81520

小計金額 $3.55412

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