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STF7N52K3

在庫數 5000

  • 1+: $2.41172
  • 10+: $2.27521
  • 100+: $2.14642
  • 500+: $2.02493
  • 1000+: $1.91031

小計金額 $2.41172

仕様 よくある質問
  • Mount:Through Hole
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Number of Pins:3
  • Transistor Element Material:SILICON
  • Current - Continuous Drain (Id) @ 25℃:6A Tc
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Number of Elements:1
  • Power Dissipation (Max):25W Tc
  • Turn Off Delay Time:36 ns
  • Voltage - Gate Threshold (Vgs(th)) (Max) @ Id:4.5V @ 50μA
  • Operating Temperature:150°C TJ
  • Packaging:Tube
  • Series:SuperMESH3™
  • JESD-609 Code:e3
  • Part Status:Obsolete
  • Moisture Sensitivity Level (MSL):Not Applicable
  • Number of Terminations:3
  • ECCN Code:EAR99
  • Terminal Finish:Matte Tin (Sn) - annealed
  • Terminal Position:SINGLE
  • Base Part Number:STF7N
  • Configuration:SINGLE WITH BUILT-IN DIODE
  • Operating Mode:ENHANCEMENT MODE
  • Power Dissipation:25W
  • Case Connection:ISOLATED
  • Turn On Delay Time:13 ns
  • FET Type:N-Channel
  • Transistor Application:SWITCHING
  • Rds On (Max) @ Id, Vgs:850m Ω @ 3A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds:870pF @ 100V
  • Gate Charge (Qg) (Max) @ Vgs:33nC @ 10V
  • Rise Time:11ns
  • Vgs (Max):±30V
  • Fall Time (Typ):19 ns
  • Continuous Drain Current (ID):6A
  • JEDEC-95 Code:TO-220AB
  • Gate to Source Voltage (Vgs):30V
  • Drain Current-Max (Abs) (ID):6.2A
  • Drain-source On Resistance-Max:0.98Ohm
  • Drain to Source Breakdown Voltage:525V
  • Pulsed Drain Current-Max (IDM):25A
  • Nominal Vgs:3.75 V
  • Height:16.4mm
  • Length:10.4mm
  • Width:4.6mm
  • REACH SVHC:No SVHC
  • Radiation Hardening:No
  • RoHS Status:ROHS3 Compliant
  • Lead Free:Lead Free

在庫數 5000

  • 1+: $2.41172
  • 10+: $2.27521
  • 100+: $2.14642
  • 500+: $2.02493
  • 1000+: $1.91031

小計金額 $2.41172

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