FQP12P20

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-220-3
MOSFET P-CH 200V 11.5A TO-220
Date Sheet

在庫數 15399

1+： $1.52146
10+： $1.43533
100+： $1.35409
500+： $1.27744
1000+： $1.20513

小計金額 $1.52146

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 2 days ago)
Factory Lead Time：5 Weeks
Contact Plating：Tin
Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-220-3
Number of Pins：3
Weight：1.8g
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：11.5A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：120W Tc
Turn Off Delay Time：40 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tube
Series：QFET®
Published：2013
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
Termination：Through Hole
ECCN Code：EAR99
Resistance：470MOhm
Voltage - Rated DC：-200V
Current Rating：-11.5A
Lead Pitch：2.54mm
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：120W
Turn On Delay Time：20 ns
FET Type：P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：470m Ω @ 5.75A, 10V
Vgs(th) (Max) @ Id：5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：1200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：40nC @ 10V
Rise Time：195ns
Drain to Source Voltage (Vdss)：200V
Vgs (Max)：±30V
Fall Time (Typ)：60 ns
Continuous Drain Current (ID)：11.5A
Threshold Voltage：-5V
JEDEC-95 Code：TO-220AB
Gate to Source Voltage (Vgs)：30V
Drain to Source Breakdown Voltage：-200V
Pulsed Drain Current-Max (IDM)：46A
Dual Supply Voltage：-200V
Nominal Vgs：-5 V
Height：9.4mm
Length：10.1mm
Width：4.7mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 15399

1+： $1.52146
10+： $1.43533
100+： $1.35409
500+： $1.27744
1000+： $1.20513

小計金額 $1.52146

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FQP12P20