FQD6N40CTM

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET 400V N-Channel Advance QFET
Date Sheet

在庫數 500000

1+： $5.42791
10+： $5.12067
100+： $4.83082
500+： $4.55737
1000+： $4.29941

小計金額 $5.42791

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 1 day ago)
Factory Lead Time：4 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Weight：260.37mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：4.5A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：2.5W Ta 48W Tc
Turn Off Delay Time：21 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：QFET®
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：1Ohm
Terminal Finish：Tin (Sn)
Additional Feature：FAST SWITCHING
Voltage - Rated DC：400V
Terminal Form：GULL WING
Current Rating：4.5A
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Case Connection：DRAIN
Turn On Delay Time：13 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：1 Ω @ 2.25A, 10V
Vgs(th) (Max) @ Id：4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：625pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
Rise Time：65ns
Vgs (Max)：±30V
Fall Time (Typ)：38 ns
Continuous Drain Current (ID)：4.5A
Threshold Voltage：2V
JEDEC-95 Code：TO-252AA
Gate to Source Voltage (Vgs)：30V
Drain to Source Breakdown Voltage：400V
Avalanche Energy Rating (Eas)：270 mJ
Height：2.3mm
Length：6.6mm
Width：6.1mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 500000

1+： $5.42791
10+： $5.12067
100+： $4.83082
500+： $4.55737
1000+： $4.29941

小計金額 $5.42791

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FQD6N40CTM