FDB8441

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Trans MOSFET N-CH 40V 80A 3-Pin(2 Tab) D2PAK T/R
Date Sheet

在庫數 100000

小計金額 $0.00000

仕様よくある質問

Factory Lead Time：8 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins：2
Weight：1.31247g
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：28A Ta 120A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：300W Tc
Turn Off Delay Time：75 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：4V @ 250μA
Operating Temperature：-55°C~175°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2006
JESD-609 Code：e3
Pbfree Code：yes
Part Status：ACTIVE (Last Updated: 1 day ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
Termination：SMD/SMT
ECCN Code：EAR99
Resistance：2.5MOhm
Terminal Finish：Tin (Sn)
Voltage - Rated DC：40V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Current Rating：80A
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：300W
Case Connection：DRAIN
Turn On Delay Time：23 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：2.5m Ω @ 80A, 10V
Input Capacitance (Ciss) (Max) @ Vds：15000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：280nC @ 10V
Rise Time：24ns
Vgs (Max)：±20V
Fall Time (Typ)：17.9 ns
Reverse Recovery Time：52 ns
Continuous Drain Current (ID)：28A
Threshold Voltage：2.8V
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：40V
Dual Supply Voltage：40V
Avalanche Energy Rating (Eas)：947 mJ
Nominal Vgs：2.8 V
Height：4.83mm
Length：10.67mm
Width：9.65mm
REACH SVHC：No SVHC
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 100000

小計金額 $0.00000

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FDB8441