FQB34N20LTM

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MOSFET N-CH 200V 31A D2PAK
Date Sheet

在庫數 5532

1+： $5.72484
10+： $5.40079
100+： $5.09509
500+： $4.80669
1000+： $4.53461

小計金額 $5.72484

仕様よくある質問

Factory Lead Time：4 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins：2
Weight：1.31247g
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：31A Tc
Drive Voltage (Max Rds On, Min Rds On)：5V 10V
Number of Elements：1
Power Dissipation (Max)：3.13W Ta 180W Tc
Turn Off Delay Time：170 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：2V @ 250μA
Operating Temperature：-55°C~150°C TJ
Packaging：Cut Tape (CT)
Series：QFET®
Published：2000
JESD-609 Code：e3
Pbfree Code：yes
Part Status：ACTIVE (Last Updated: 21 hours ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
Termination：SMD/SMT
ECCN Code：EAR99
Resistance：75mOhm
Terminal Finish：Tin (Sn)
Voltage - Rated DC：200V
Terminal Form：GULL WING
Current Rating：31A
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：3.13W
Case Connection：DRAIN
Turn On Delay Time：45 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：75m Ω @ 15.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds：3900pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：72nC @ 5V
Rise Time：520ns
Vgs (Max)：±20V
Fall Time (Typ)：370 ns
Continuous Drain Current (ID)：31A
Threshold Voltage：2V
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：200V
Dual Supply Voltage：200V
Avalanche Energy Rating (Eas)：640 mJ
Nominal Vgs：2 V
Feedback Cap-Max (Crss)：67 pF
Height：4.83mm
Length：10.67mm
Width：9.65mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 5532

1+： $5.72484
10+： $5.40079
100+： $5.09509
500+： $4.80669
1000+： $4.53461

小計金額 $5.72484

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FQB34N20LTM