画像はあくまで参考です。

FQB34N20TM-AM002

在庫數 4000

  • 1+: $2.64730
  • 10+: $2.49745
  • 100+: $2.35608
  • 500+: $2.22272
  • 1000+: $2.09691

小計金額 $2.64730

仕様 よくある質問
  • Factory Lead Time:4 Weeks
  • Contact Plating:Tin
  • Mount:Surface Mount
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Number of Pins:3
  • Weight:1.31247g
  • Transistor Element Material:SILICON
  • Power Dissipation (Max):3.13W Ta 180W Tc
  • Turn Off Delay Time:125 ns
  • Current - Continuous Drain (Id) @ 25℃:31A Tc
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Number of Elements:1
  • Voltage - Gate Threshold (Vgs(th)) (Max) @ Id:5V @ 250μA
  • Series:QFET®
  • Operating Temperature:-55°C~150°C TJ
  • Packaging:Tape & Reel (TR)
  • Pbfree Code:yes
  • Part Status:Active
  • Moisture Sensitivity Level (MSL):1 (Unlimited)
  • Number of Terminations:2
  • Voltage - Rated DC:200V
  • Terminal Form:GULL WING
  • Peak Reflow Temperature (Cel):NOT SPECIFIED
  • Current Rating:31A
  • Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
  • JESD-30 Code:R-PSSO-G2
  • Qualification Status:Not Qualified
  • Element Configuration:Single
  • Operating Mode:ENHANCEMENT MODE
  • Power Dissipation:3.13W
  • Case Connection:DRAIN
  • Turn On Delay Time:40 ns
  • FET Type:N-Channel
  • Transistor Application:SWITCHING
  • Rds On (Max) @ Id, Vgs:75m Ω @ 15.5A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds:3100pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs:78nC @ 10V
  • Rise Time:280ns
  • Vgs (Max):±30V
  • Fall Time (Typ):115 ns
  • Continuous Drain Current (ID):31A
  • Gate to Source Voltage (Vgs):30V
  • Drain-source On Resistance-Max:0.075Ohm
  • Drain to Source Breakdown Voltage:200V
  • Avalanche Energy Rating (Eas):640 mJ
  • REACH SVHC:not_compliant
  • RoHS Status:ROHS3 Compliant
  • Lead Free:Lead Free

在庫數 4000

  • 1+: $2.64730
  • 10+: $2.49745
  • 100+: $2.35608
  • 500+: $2.22272
  • 1000+: $2.09691

小計金額 $2.64730

類似スペック製品