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STP12NM50

在庫數 38658

  • 1+: $4.61522
  • 10+: $4.35398
  • 100+: $4.10752
  • 500+: $3.87502
  • 1000+: $3.65568

小計金額 $4.61522

仕様 よくある質問
  • Lifecycle Status:ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time:16 Weeks
  • Mount:Through Hole
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Number of Pins:3
  • Weight:4.535924g
  • Transistor Element Material:SILICON
  • Current - Continuous Drain (Id) @ 25℃:12A Tc
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Number of Elements:1
  • Power Dissipation (Max):160W Tc
  • Operating Temperature:-65°C~150°C TJ
  • Packaging:Tube
  • Series:MDmesh™
  • JESD-609 Code:e3
  • Part Status:Active
  • Moisture Sensitivity Level (MSL):1 (Unlimited)
  • Number of Terminations:3
  • ECCN Code:EAR99
  • Resistance:350mOhm
  • Terminal Finish:Tin (Sn)
  • Additional Feature:AVALANCHE RATED
  • Voltage - Rated DC:500V
  • Current Rating:12A
  • Base Part Number:STP12
  • Pin Count:3
  • Number of Channels:1
  • Element Configuration:Single
  • Operating Mode:ENHANCEMENT MODE
  • Power Dissipation:160W
  • Turn On Delay Time:20 ns
  • FET Type:N-Channel
  • Transistor Application:SWITCHING
  • Rds On (Max) @ Id, Vgs:350m Ω @ 6A, 10V
  • Vgs(th) (Max) @ Id:5V @ 50μA
  • Input Capacitance (Ciss) (Max) @ Vds:1000pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs:39nC @ 10V
  • Rise Time:10ns
  • Vgs (Max):±30V
  • Continuous Drain Current (ID):12A
  • Threshold Voltage:4V
  • JEDEC-95 Code:TO-220AB
  • Gate to Source Voltage (Vgs):30V
  • Drain to Source Breakdown Voltage:500V
  • Pulsed Drain Current-Max (IDM):48A
  • Avalanche Energy Rating (Eas):400 mJ
  • Max Junction Temperature (Tj):150°C
  • Height:19.68mm
  • Length:10.4mm
  • Width:4.6mm
  • REACH SVHC:No SVHC
  • Radiation Hardening:No
  • RoHS Status:ROHS3 Compliant
  • Lead Free:Lead Free

在庫數 38658

  • 1+: $4.61522
  • 10+: $4.35398
  • 100+: $4.10752
  • 500+: $3.87502
  • 1000+: $3.65568

小計金額 $4.61522

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