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STP12NM50
-
STMicroelectronics
-
Transistors - FETs, MOSFETs - Single
- TO-220-3
- Trans MOSFET N-CH 500V 12A 3-Pin(3 Tab) TO-220 Tube
Date Sheet
在庫數 38658
- 1+: $4.61522
- 10+: $4.35398
- 100+: $4.10752
- 500+: $3.87502
- 1000+: $3.65568
小計金額 $4.61522
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 8 months ago)
- Factory Lead Time:16 Weeks
- Mount:Through Hole
- Mounting Type:Through Hole
- Package / Case:TO-220-3
- Number of Pins:3
- Weight:4.535924g
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:12A Tc
- Drive Voltage (Max Rds On, Min Rds On):10V
- Number of Elements:1
- Power Dissipation (Max):160W Tc
- Operating Temperature:-65°C~150°C TJ
- Packaging:Tube
- Series:MDmesh™
- JESD-609 Code:e3
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Resistance:350mOhm
- Terminal Finish:Tin (Sn)
- Additional Feature:AVALANCHE RATED
- Voltage - Rated DC:500V
- Current Rating:12A
- Base Part Number:STP12
- Pin Count:3
- Number of Channels:1
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:160W
- Turn On Delay Time:20 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:350m Ω @ 6A, 10V
- Vgs(th) (Max) @ Id:5V @ 50μA
- Input Capacitance (Ciss) (Max) @ Vds:1000pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs:39nC @ 10V
- Rise Time:10ns
- Vgs (Max):±30V
- Continuous Drain Current (ID):12A
- Threshold Voltage:4V
- JEDEC-95 Code:TO-220AB
- Gate to Source Voltage (Vgs):30V
- Drain to Source Breakdown Voltage:500V
- Pulsed Drain Current-Max (IDM):48A
- Avalanche Energy Rating (Eas):400 mJ
- Max Junction Temperature (Tj):150°C
- Height:19.68mm
- Length:10.4mm
- Width:4.6mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 38658
- 1+: $4.61522
- 10+: $4.35398
- 100+: $4.10752
- 500+: $3.87502
- 1000+: $3.65568
小計金額 $4.61522
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