FDS8876

ON Semiconductor
Transistors - FETs, MOSFETs - Single
8-SOIC (0.154, 3.90mm Width)
MOSFET 30V 12.5A 8.2 OHMS NCH
Date Sheet

在庫數 3000

小計金額 $0.00000

仕様よくある質問

Factory Lead Time：18 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154, 3.90mm Width)
Number of Pins：8
Weight：130mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：12.5A Ta
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：2.5W Ta
Turn Off Delay Time：53 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：2.5V @ 250μA
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
JESD-609 Code：e4
Pbfree Code：yes
Part Status：ACTIVE (Last Updated: 2 days ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：8
ECCN Code：EAR99
Resistance：8.2MOhm
Terminal Finish：Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature：FAST SWITCHING
Voltage - Rated DC：30V
Terminal Position：DUAL
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Current Rating：12.5A
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Turn On Delay Time：8 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：8.2m Ω @ 12.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds：1650pF @ 15V
Gate Charge (Qg) (Max) @ Vgs：36nC @ 10V
Rise Time：34ns
Vgs (Max)：±20V
Fall Time (Typ)：19 ns
Continuous Drain Current (ID)：12.5A
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：30V
Height：1.5mm
Length：5mm
Width：4mm
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 3000

小計金額 $0.00000

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FDS8876