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FQPF6N80T
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- TO-220-3 Full Pack
- Trans MOSFET N-CH 800V 3.3A 3-Pin(3 Tab) TO-220F Tube
Date Sheet
在庫數 38685
- 1+： $2.94689
- 10+： $2.78009
- 100+： $2.62272
- 500+： $2.47427
- 1000+： $2.33422
小計金額 $2.94689
仕様 よくある質問
- Lifecycle Status：ACTIVE (Last Updated: 1 week ago)
- Factory Lead Time：7 Weeks
- Mount：Through Hole
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Number of Pins：3
- Weight：2.27g
- Transistor Element Material：SILICON
- Current - Continuous Drain (Id) @ 25℃：3.3A Tc
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Number of Elements：1
- Power Dissipation (Max)：51W Tc
- Turn Off Delay Time：65 ns
- Operating Temperature：-55°C~150°C TJ
- Packaging：Tube
- Series：QFET®
- Published：2013
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Terminal Finish：Tin (Sn)
- Additional Feature：UL RECOGNIZED
- Voltage - Rated DC：800V
- Current Rating：3.3A
- Element Configuration：Single
- Operating Mode：ENHANCEMENT MODE
- Power Dissipation：51W
- Case Connection：ISOLATED
- Turn On Delay Time：30 ns
- FET Type：N-Channel
- Transistor Application：SWITCHING
- Rds On (Max) @ Id, Vgs：1.95 Ω @ 1.65A, 10V
- Vgs(th) (Max) @ Id：5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds：1500pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs：31nC @ 10V
- Rise Time：70ns
- Vgs (Max)：±30V
- Fall Time (Typ)：45 ns
- Continuous Drain Current (ID)：3.3A
- JEDEC-95 Code：TO-220AB
- Gate to Source Voltage (Vgs)：30V
- Drain to Source Breakdown Voltage：800V
- Avalanche Energy Rating (Eas)：680 mJ
- Height：16.07mm
- Length：10.36mm
- Width：4.9mm
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
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