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FQPF4N90CT
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- TO-220-3 Full Pack
- MOSFET 900V, 4A, NCH MOSFET
Date Sheet
在庫數 10000
- 1+: $0.79007
- 10+: $0.74535
- 100+: $0.70316
- 500+: $0.66336
- 1000+: $0.62581
小計金額 $0.79007
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 1 week ago)
- Factory Lead Time:4 Weeks
- Package / Case:TO-220-3 Full Pack
- Mounting Type:Through Hole
- Mount:Through Hole
- Number of Pins:3
- Weight:2.27g
- Current - Continuous Drain (Id) @ 25℃:4A Tc
- Drive Voltage (Max Rds On, Min Rds On):10V
- Turn Off Delay Time:40 ns
- Power Dissipation (Max):47W Tc
- Number of Elements:1
- Series:QFET®
- Packaging:Tube
- Operating Temperature:-55°C~150°C TJ
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- ECCN Code:EAR99
- Terminal Finish:Tin (Sn)
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:47W
- Turn On Delay Time:25 ns
- FET Type:N-Channel
- Rds On (Max) @ Id, Vgs:4.2 Ω @ 2A, 10V
- Vgs(th) (Max) @ Id:5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:960pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs:22nC @ 10V
- Rise Time:50ns
- Drain to Source Voltage (Vdss):900V
- Vgs (Max):±30V
- Fall Time (Typ):35 ns
- Continuous Drain Current (ID):4A
- Gate to Source Voltage (Vgs):30V
- Drain Current-Max (Abs) (ID):4A
- RoHS Status:ROHS3 Compliant
- Radiation Hardening:No
- Lead Free:Lead Free
在庫數 10000
- 1+: $0.79007
- 10+: $0.74535
- 100+: $0.70316
- 500+: $0.66336
- 1000+: $0.62581
小計金額 $0.79007
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