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STD12NF06LT4
-
STMicroelectronics
-
Transistors - FETs, MOSFETs - Single
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Trans MOSFET N-CH 60V 12A 3-Pin(2 Tab) DPAK T/R
Date Sheet
在庫數 230
- 1+: $3.76987
- 10+: $3.55648
- 100+: $3.35517
- 500+: $3.16526
- 1000+: $2.98609
小計金額 $3.76987
仕様 よくある質問
- Contact Plating:Tin
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins:3
- Weight:4.535924g
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:12A Tc
- Drive Voltage (Max Rds On, Min Rds On):5V 10V
- Number of Elements:1
- Power Dissipation (Max):42.8W Tc
- Turn Off Delay Time:20 ns
- Operating Temperature:-55°C~175°C TJ
- Packaging:Tape & Reel (TR)
- Series:STripFET™ II
- JESD-609 Code:e3
- Part Status:Obsolete
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:2
- Termination:SMD/SMT
- ECCN Code:EAR99
- Resistance:100mOhm
- Voltage - Rated DC:60V
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):260
- Current Rating:12A
- Time@Peak Reflow Temperature-Max (s):30
- Base Part Number:STD12
- Pin Count:3
- JESD-30 Code:R-PSSO-G2
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:30W
- Case Connection:DRAIN
- Turn On Delay Time:10 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:100m Ω @ 6A, 10V
- Vgs(th) (Max) @ Id:2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:350pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs:10nC @ 5V
- Rise Time:35ns
- Vgs (Max):±16V
- Fall Time (Typ):13 ns
- Continuous Drain Current (ID):12A
- Threshold Voltage:3V
- Gate to Source Voltage (Vgs):16V
- Drain to Source Breakdown Voltage:60V
- Pulsed Drain Current-Max (IDM):48A
- Dual Supply Voltage:60V
- Nominal Vgs:2 V
- Height:2.4mm
- Length:6.6mm
- Width:6.2mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 230
- 1+: $3.76987
- 10+: $3.55648
- 100+: $3.35517
- 500+: $3.16526
- 1000+: $2.98609
小計金額 $3.76987
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