NTD85N02RT4G

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET N-CH 24V 12A DPAK
Date Sheet

在庫數 400

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：LAST SHIPMENTS (Last Updated: 1 day ago)
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：4
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：12A Ta 85A Tc
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：1.25W Ta 78.1W Tc
Turn Off Delay Time：25 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Published：2007
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Obsolete
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
Voltage - Rated DC：24V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Current Rating：85A
Time@Peak Reflow Temperature-Max (s)：40
Pin Count：4
JESD-30 Code：R-PSSO-G2
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.4W
Case Connection：DRAIN
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：5.2m Ω @ 20A, 10V
Vgs(th) (Max) @ Id：2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：2050pF @ 20V
Gate Charge (Qg) (Max) @ Vgs：17.7nC @ 5V
Rise Time：77ns
Vgs (Max)：±20V
Fall Time (Typ)：12 ns
Continuous Drain Current (ID)：85A
Gate to Source Voltage (Vgs)：20V
Drain-source On Resistance-Max：0.0052Ohm
Drain to Source Breakdown Voltage：24V
Avalanche Energy Rating (Eas)：85 mJ
RoHS Status：RoHS Compliant
Lead Free：Lead Free

在庫數 400

小計金額 $0.00000

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NTD85N02RT4G