NTD30N02G

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET N-CH 24V 30A DPAK
Date Sheet

在庫數 90000

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：LAST SHIPMENTS (Last Updated: 6 days ago)
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type：Surface Mount
Mount：Surface Mount
Number of Pins：3
Transistor Element Material：SILICON
Turn Off Delay Time：15 ns
Power Dissipation (Max)：75W Tj
Number of Elements：1
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Current - Continuous Drain (Id) @ 25℃：30A Ta
Published：2006
Packaging：Tube
Operating Temperature：-55°C~150°C TJ
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Obsolete
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
Terminal Finish：Tin (Sn)
HTS Code：8541.29.00.95
Voltage - Rated DC：24V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Current Rating：30A
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
Pin Count：3
JESD-30 Code：R-PSSO-G2
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：75W
Case Connection：DRAIN
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：14.5m Ω @ 30A, 10V
Vgs(th) (Max) @ Id：3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：1000pF @ 20V
Gate Charge (Qg) (Max) @ Vgs：20nC @ 4.5V
Rise Time：115ns
Vgs (Max)：±20V
Fall Time (Typ)：17 ns
Continuous Drain Current (ID)：30A
Gate to Source Voltage (Vgs)：20V
Drain-source On Resistance-Max：0.0145Ohm
Drain to Source Breakdown Voltage：24V
Pulsed Drain Current-Max (IDM)：100A
Avalanche Energy Rating (Eas)：50 mJ
RoHS Status：RoHS Compliant
Lead Free：Lead Free

在庫數 90000

小計金額 $0.00000

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NTD30N02G