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FJV3106RMTF
-
ON Semiconductor
-
Transistors - Bipolar (BJT) - Single, Pre-Biased
- TO-236-3, SC-59, SOT-23-3
- TRANS PREBIAS NPN 200MW SOT23-3
Date Sheet
在庫數 8510
小計金額 $0.00000
仕様 よくある質問
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Number of Pins:3
- Collector-Emitter Breakdown Voltage:50V
- hFEMin:68
- Packaging:Tape & Reel (TR)
- Published:2002
- Part Status:Obsolete
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Max Operating Temperature:150°C
- Min Operating Temperature:-55°C
- Voltage - Rated DC:50V
- Max Power Dissipation:200mW
- Current Rating:100mA
- Polarity:NPN
- Element Configuration:Single
- Power Dissipation:200mW
- Transistor Type:NPN - Pre-Biased
- Collector Emitter Voltage (VCEO):50V
- Max Collector Current:100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:68 @ 5mA 5V
- Current - Collector Cutoff (Max):100nA ICBO
- Vce Saturation (Max) @ Ib, Ic:300mV @ 500μA, 10mA
- Frequency - Transition:250MHz
- Emitter Base Voltage (VEBO):10V
- Resistor - Base (R1):10 k Ω
- Continuous Collector Current:100mA
- Resistor - Emitter Base (R2):47 k Ω
- RoHS Status:RoHS Compliant
- Lead Free:Lead Free
在庫數 8510
小計金額 $0.00000
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