APT18M80B

Microchip Technology
Transistors - FETs, MOSFETs - Single
TO-247-3
MOSFET FG, MOSFET, 800V, TO-247View in Development Tools Selector
Date Sheet

在庫數 113

小計金額 $0.00000

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Package / Case：TO-247-3
Mounting Type：Through Hole
Mount：Through Hole
Surface Mount：NO
Number of Pins：3
Supplier Device Package：TO-247 [B]
Number of Terminals：3
Transistor Element Material：SILICON
RoHS：Details
Mounting Styles：Through Hole
Transistor Polarity：N-Channel
Vds - Drain-Source Breakdown Voltage：800 V
Id - Continuous Drain Current：19 A
Rds On - Drain-Source Resistance：530 mOhms
Vgs - Gate-Source Voltage：- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage：4 V
Qg - Gate Charge：120 nC
Minimum Operating Temperature：- 55 C
Maximum Operating Temperature：+ 150 C
Pd - Power Dissipation：500 W
Channel Mode：Enhancement
Fall Time：27 ns
Forward Transconductance - Min：17 S
Factory Pack QuantityFactory Pack Quantity：1
Typical Turn-Off Delay Time：95 ns
Typical Turn-On Delay Time：21 ns
Unit Weight：0.211644 oz
Continuous Drain Current Id：19
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：5V @ 1mA
Product Status：Active
Power Dissipation (Max)：500W (Tc)
Mfr：Microchip Technology
Drive Voltage (Max Rds On, Min Rds On)：10V
Current - Continuous Drain (Id) @ 25℃：19A (Tc)
Base Product Number：APT18M80
Package：Tube
Number of Elements：1
Voltage Rating (DC)：800 V
Turn Off Delay Time：95 ns
Package Description：ROHS COMPLIANT PACKAGE-3
Package Style：FLANGE MOUNT
Package Body Material：PLASTIC/EPOXY
Reflow Temperature-Max (s)：NOT SPECIFIED
Operating Temperature-Max：150 °C
Rohs Code：Yes
Manufacturer Part Number：APT18M80B
Package Shape：RECTANGULAR
Part Life Cycle Code：Active
Ihs Manufacturer：MICROSEMI CORP
Risk Rank：1.78
Part Package Code：TO-247
Drain Current-Max (ID)：19 A
Packaging：Tube
Series：POWER MOS 8™
Operating Temperature：-55°C ~ 150°C (TJ)
JESD-609 Code：e1
Pbfree Code：Yes
Part Status：Production (Last Updated: 2 months ago)
ECCN Code：EAR99
Terminal Finish：Tin/Silver/Copper (Sn/Ag/Cu)
Max Operating Temperature：150 °C
Min Operating Temperature：-55 °C
Additional Feature：AVALANCHE RATED
Max Power Dissipation：500 W
Terminal Position：SINGLE
Terminal Form：THROUGH-HOLE
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Current Rating：18 A
JESD-30 Code：R-PSFM-T3
Qualification Status：Not Qualified
Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：500
Case Connection：DRAIN
Turn On Delay Time：21 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：530mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds：3760 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs：120 nC @ 10 V
Rise Time：31 ns
Drain to Source Voltage (Vdss)：800 V
Vgs (Max)：±30V
Polarity/Channel Type：N-CHANNEL
Continuous Drain Current (ID)：19 A
JEDEC-95 Code：TO-247
Gate to Source Voltage (Vgs)：30 V
Drain-source On Resistance-Max：0.53 Ω
Pulsed Drain Current-Max (IDM)：70 A
Input Capacitance：3.76 nF
DS Breakdown Voltage-Min：800 V
Channel Type：N
Avalanche Energy Rating (Eas)：795 mJ
FET Technology：METAL-OXIDE SEMICONDUCTOR
FET Feature：-
Rds On Max：530 mΩ
Radiation Hardening：No
REACH SVHC：unknown
Lead Free：Lead Free

在庫數 113

小計金額 $0.00000

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APT18M80B