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2N5886G
-
ON Semiconductor
-
Transistors - Bipolar (BJT) - Single
- TO-204AA, TO-3
- TRANS NPN 80V 25A TO3
Date Sheet
在庫數 12500
- 1+: $6.47283
- 10+: $6.10645
- 100+: $5.76080
- 500+: $5.43472
- 1000+: $5.12709
小計金額 $6.47283
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 2 days ago)
- Factory Lead Time:13 Weeks
- Contact Plating:Tin
- Mounting Type:Through Hole
- Package / Case:TO-204AA, TO-3
- Surface Mount:NO
- Number of Pins:2
- Weight:4.535924g
- Transistor Element Material:SILICON
- Collector-Emitter Breakdown Voltage:80V
- Collector-Emitter Saturation Voltage:1V
- Number of Elements:1
- hFEMin:20
- Operating Temperature:-65°C~200°C TJ
- Packaging:Tray
- Published:2005
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:2
- ECCN Code:EAR99
- Voltage - Rated DC:80V
- Max Power Dissipation:200W
- Terminal Position:BOTTOM
- Terminal Form:PIN/PEG
- Peak Reflow Temperature (Cel):260
- Current Rating:25A
- Frequency:4MHz
- Time@Peak Reflow Temperature-Max (s):40
- Base Part Number:2N5886
- Pin Count:2
- Element Configuration:Single
- Power Dissipation:200W
- Case Connection:COLLECTOR
- Transistor Application:SWITCHING
- Gain Bandwidth Product:4MHz
- Polarity/Channel Type:NPN
- Transistor Type:NPN
- Collector Emitter Voltage (VCEO):80V
- Max Collector Current:25A
- DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 10A 4V
- Current - Collector Cutoff (Max):2mA
- Vce Saturation (Max) @ Ib, Ic:4V @ 6.25A, 25A
- Transition Frequency:4MHz
- Collector Base Voltage (VCBO):80V
- Emitter Base Voltage (VEBO):5V
- Height:8.51mm
- Length:39.37mm
- Width:26.67mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free











