STB20N95K5

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MOSFET N-CH 950V 17.5A D2PAK
Date Sheet

在庫數 55

小計金額 $0.00000

仕様よくある質問

Factory Lead Time：26 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：17.5A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Turn Off Delay Time：70 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：5V @ 100μA
Number of Elements：1
Power Dissipation (Max)：250W Tc
Series：SuperMESH5™
Operating Temperature：-55°C~150°C TJ
Packaging：Cut Tape (CT)
JESD-609 Code：e3
Part Status：ACTIVE (Last Updated: 8 months ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：330MOhm
Terminal Finish：Matte Tin (Sn)
Terminal Position：SINGLE
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：245
Base Part Number：STB20N
JESD-30 Code：R-PSSO-G2
Configuration：SINGLE WITH BUILT-IN DIODE
Operating Mode：ENHANCEMENT MODE
Power Dissipation：250W
Case Connection：DRAIN
Turn On Delay Time：17 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：330m Ω @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds：1500pF @ 100V
Gate Charge (Qg) (Max) @ Vgs：40nC @ 10V
Rise Time：12ns
Vgs (Max)：±30V
Fall Time (Typ)：20 ns
Continuous Drain Current (ID)：17.5A
Gate to Source Voltage (Vgs)：30V
Drain to Source Breakdown Voltage：950V
Pulsed Drain Current-Max (IDM)：70A
Avalanche Energy Rating (Eas)：200 mJ
RoHS Status：ROHS3 Compliant
Radiation Hardening：No
Lead Free：Lead Free

在庫數 55

小計金額 $0.00000

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STB20N95K5