FQB6N80TM

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MOSFET 800V N-Channel QFET
Date Sheet

在庫數 606

小計金額 $0.00000

仕様よくある質問

Factory Lead Time：4 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins：3
Weight：1.31247g
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：5.8A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：3.13W Ta 158W Tc
Turn Off Delay Time：65 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：5V @ 250μA
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：QFET®
Published：2000
JESD-609 Code：e3
Pbfree Code：yes
Part Status：ACTIVE (Last Updated: 1 day ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：1.95Ohm
Voltage - Rated DC：800V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Current Rating：5.8A
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
JESD-30 Code：R-PSSO-G2
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：3.13W
Case Connection：DRAIN
Turn On Delay Time：30 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：1.95 Ω @ 2.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds：1500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：31nC @ 10V
Rise Time：70ns
Vgs (Max)：±30V
Fall Time (Typ)：45 ns
Continuous Drain Current (ID)：5.8A
Threshold Voltage：5V
Gate to Source Voltage (Vgs)：30V
Drain to Source Breakdown Voltage：800V
Avalanche Energy Rating (Eas)：680 mJ
Height：4.83mm
Length：10.67mm
Width：9.65mm
REACH SVHC：No SVHC
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 606

小計金額 $0.00000

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