STB18NM80

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MOSFET N-CH 800V 17A D2PAK
Date Sheet

在庫數 1500

小計金額 $0.00000

仕様よくある質問

Factory Lead Time：26 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：17A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：190W Tc
Turn Off Delay Time：96 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：5V @ 250μA
Operating Temperature：150°C TJ
Packaging：Cut Tape (CT)
Series：MDmesh™
JESD-609 Code：e3
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：295mOhm
Terminal Finish：Matte Tin (Sn) - annealed
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：245
Time@Peak Reflow Temperature-Max (s)：30
Base Part Number：STB18N
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：190W
Turn On Delay Time：18 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：295m Ω @ 8.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds：2070pF @ 50V
Gate Charge (Qg) (Max) @ Vgs：70nC @ 10V
Rise Time：28ns
Vgs (Max)：±25V
Fall Time (Typ)：50 ns
Continuous Drain Current (ID)：17A
Threshold Voltage：4V
Gate to Source Voltage (Vgs)：30V
Drain to Source Breakdown Voltage：800V
Pulsed Drain Current-Max (IDM)：68A
Avalanche Energy Rating (Eas)：600 mJ
Height：4.6mm
Length：10.75mm
Width：10.4mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 1500

小計金額 $0.00000

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STB18NM80