FCD9N60NTM

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET N-CH 600V 9A DPAK
Date Sheet

在庫數 21590

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 5 days ago)
Factory Lead Time：12 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Weight：260.37mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：9A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：92.6W Tc
Turn Off Delay Time：28.7 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：SupreMOS™
Published：2004
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：not_compliant
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
Base Part Number：FCD9N60
JESD-30 Code：R-PSSO-G2
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：92.6W
Case Connection：DRAIN
Turn On Delay Time：12.7 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：385m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id：5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：1000pF @ 100V
Gate Charge (Qg) (Max) @ Vgs：17.8nC @ 10V
Rise Time：9.6ns
Vgs (Max)：±30V
Fall Time (Typ)：11.5 ns
Continuous Drain Current (ID)：9A
Threshold Voltage：3V
Gate to Source Voltage (Vgs)：30V
Drain Current-Max (Abs) (ID)：9A
Drain to Source Breakdown Voltage：600V
Pulsed Drain Current-Max (IDM)：27A
Height：2.39mm
Length：6.73mm
Width：6.22mm
REACH SVHC：No SVHC
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 21590

小計金額 $0.00000

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FCD9N60NTM