STD13NM60N

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET N-CH 600V 11A DPAK
Date Sheet

在庫數 2500

1+： $3.15380
10+： $2.97528
100+： $2.80687
500+： $2.64799
1000+： $2.49810

小計金額 $3.15380

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 7 months ago)
Factory Lead Time：16 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：11A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：90W Tc
Turn Off Delay Time：30 ns
Operating Temperature：150°C TJ
Packaging：Tape & Reel (TR)
Series：MDmesh™ II
JESD-609 Code：e3
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：360mOhm
Terminal Finish：Matte Tin (Sn) - annealed
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Time@Peak Reflow Temperature-Max (s)：30
Base Part Number：STD13
Pin Count：3
JESD-30 Code：R-PSSO-G2
Number of Channels：1
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：90W
Turn On Delay Time：3 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：360m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：790pF @ 50V
Gate Charge (Qg) (Max) @ Vgs：30nC @ 10V
Rise Time：8ns
Vgs (Max)：±25V
Fall Time (Typ)：10 ns
Continuous Drain Current (ID)：5.5A
Threshold Voltage：3V
Gate to Source Voltage (Vgs)：25V
Drain to Source Breakdown Voltage：600V
Pulsed Drain Current-Max (IDM)：44A
Avalanche Energy Rating (Eas)：200 mJ
Max Junction Temperature (Tj)：150°C
Height：2.63mm
Length：6.6mm
Width：6.2mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 2500

1+： $3.15380
10+： $2.97528
100+： $2.80687
500+： $2.64799
1000+： $2.49810

小計金額 $3.15380

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STD13NM60N