STD9NM60N

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET N-CH 600V 6.5A DPAK
Date Sheet

在庫數 15000

小計金額 $0.00000

仕様よくある質問

Factory Lead Time：16 Weeks
Lifecycle Status：ACTIVE (Last Updated: 8 months ago)
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type：Surface Mount
Mount：Surface Mount
Number of Pins：3
Transistor Element Material：SILICON
Power Dissipation (Max)：70W Tc
Turn Off Delay Time：52.5 ns
Number of Elements：1
Drive Voltage (Max Rds On, Min Rds On)：10V
Current - Continuous Drain (Id) @ 25℃：6.5A Tc
Series：MDmesh™ II
Packaging：Tape & Reel (TR)
Operating Temperature：150°C TJ
JESD-609 Code：e3
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：745mOhm
Terminal Finish：Matte Tin (Sn) - annealed
Terminal Position：SINGLE
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Time@Peak Reflow Temperature-Max (s)：30
Base Part Number：STD9N
Pin Count：3
JESD-30 Code：R-PSSO-G2
Configuration：SINGLE WITH BUILT-IN DIODE
Operating Mode：ENHANCEMENT MODE
Power Dissipation：70W
Turn On Delay Time：28 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：745m Ω @ 3.25A, 10V
Vgs(th) (Max) @ Id：4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：452pF @ 50V
Gate Charge (Qg) (Max) @ Vgs：17.4nC @ 10V
Rise Time：23ns
Vgs (Max)：±25V
Fall Time (Typ)：26.7 ns
Continuous Drain Current (ID)：6.5A
Threshold Voltage：3V
Gate to Source Voltage (Vgs)：25V
Drain Current-Max (Abs) (ID)：9A
Drain to Source Breakdown Voltage：600V
Pulsed Drain Current-Max (IDM)：26A
Width：6.2mm
Length：6.6mm
Height：2.4mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 15000

小計金額 $0.00000

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STD9NM60N