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STD7N60M2
-
STMicroelectronics
-
Transistors - FETs, MOSFETs - Single
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor: N-MOSFET; unipolar; 600V; 3.5A; 60W; DPAK
Date Sheet
在庫數 50000
- 1+： $1.47293
- 10+： $1.38956
- 100+： $1.31091
- 500+： $1.23670
- 1000+： $1.16670
小計金額 $1.47293
仕様 よくある質問
- Factory Lead Time：16 Weeks
- Contact Plating：Tin
- Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
- Mounting Type：Surface Mount
- Mount：Surface Mount
- Number of Pins：3
- Transistor Element Material：SILICON
- Current - Continuous Drain (Id) @ 25℃：5A Tc
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Power Dissipation (Max)：60W Tc
- Turn Off Delay Time：19.3 ns
- Number of Elements：1
- Series：MDmesh™ II Plus
- Packaging：Tape & Reel (TR)
- Operating Temperature：-55°C~150°C TJ
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：2
- ECCN Code：EAR99
- Resistance：950mOhm
- Terminal Form：GULL WING
- Base Part Number：STD7
- JESD-30 Code：R-PSSO-G2
- Number of Channels：1
- Element Configuration：Single
- Operating Mode：ENHANCEMENT MODE
- Power Dissipation：60W
- Case Connection：DRAIN
- Turn On Delay Time：7.6 ns
- FET Type：N-Channel
- Transistor Application：SWITCHING
- Rds On (Max) @ Id, Vgs：950m Ω @ 2.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds：271pF @ 100V
- Gate Charge (Qg) (Max) @ Vgs：8.8nC @ 10V
- Rise Time：7.2ns
- Vgs (Max)：±25V
- Fall Time (Typ)：15.9 ns
- Continuous Drain Current (ID)：5A
- Threshold Voltage：3V
- Gate to Source Voltage (Vgs)：25V
- Drain Current-Max (Abs) (ID)：5A
- Drain to Source Breakdown Voltage：600V
- Pulsed Drain Current-Max (IDM)：20A
- Avalanche Energy Rating (Eas)：99 mJ
- Height：2.4mm
- Length：6.6mm
- Width：6.2mm
- REACH SVHC：No SVHC
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
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