STD8NM60ND

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
Trans MOSFET N-CH 600V 7A 3-Pin(2 Tab) DPAK T/R
Date Sheet

在庫數 10200

小計金額 $0.00000

仕様よくある質問

Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：7A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：70W Tc
Turn Off Delay Time：37 ns
Operating Temperature：150°C TJ
Packaging：Tape & Reel (TR)
Series：FDmesh™ II
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Obsolete
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：700mOhm
Terminal Finish：Matte Tin (Sn) - annealed
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Base Part Number：STD8N
Pin Count：3
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：70W
Case Connection：DRAIN
Turn On Delay Time：9 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：700m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id：5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：560pF @ 50V
Gate Charge (Qg) (Max) @ Vgs：22nC @ 10V
Rise Time：22ns
Vgs (Max)：±30V
Fall Time (Typ)：22 ns
Continuous Drain Current (ID)：7A
Threshold Voltage：4V
Gate to Source Voltage (Vgs)：30V
Drain Current-Max (Abs) (ID)：7A
Drain to Source Breakdown Voltage：600V
Pulsed Drain Current-Max (IDM)：28A
Avalanche Energy Rating (Eas)：200 mJ
Nominal Vgs：4 V
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 10200

小計金額 $0.00000

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STD8NM60ND