STD10NM50N

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
STMICROELECTRONICS STD10NM50N MOSFET Transistor, N Channel, 7 A, 500 V, 0.53 ohm, 10 V, 3 V
Date Sheet

在庫數 43231

小計金額 $0.00000

仕様よくある質問

Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：7A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：70W Tc
Turn Off Delay Time：7.8 ns
Operating Temperature：150°C TJ
Packaging：Tape & Reel (TR)
Series：MDmesh™ II
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Obsolete
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：630mOhm
Terminal Finish：Matte Tin (Sn) - annealed
Terminal Position：SINGLE
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Time@Peak Reflow Temperature-Max (s)：30
Base Part Number：STD10
Pin Count：3
JESD-30 Code：R-PSSO-G2
Configuration：SINGLE WITH BUILT-IN DIODE
Operating Mode：ENHANCEMENT MODE
Power Dissipation：70W
Turn On Delay Time：7.8 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：630m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：450pF @ 50V
Gate Charge (Qg) (Max) @ Vgs：17nC @ 10V
Rise Time：4.4ns
Drain to Source Voltage (Vdss)：500V
Vgs (Max)：±25V
Fall Time (Typ)：12 ns
Continuous Drain Current (ID)：7A
Threshold Voltage：3V
Gate to Source Voltage (Vgs)：25V
Drain Current-Max (Abs) (ID)：7A
Pulsed Drain Current-Max (IDM)：28A
DS Breakdown Voltage-Min：500V
Height：2.4mm
Length：6.6mm
Width：6.2mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 43231

小計金額 $0.00000

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STD10NM50N