STD10NM60N

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET N-CH 600V 10A DPAK
Date Sheet

在庫數 4989

1+： $2.46990
10+： $2.33010
100+： $2.19820
500+： $2.07378
1000+： $1.95639

小計金額 $2.46990

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 7 months ago)
Factory Lead Time：16 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：10A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：70W Tc
Turn Off Delay Time：32 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Cut Tape (CT)
Series：MDmesh™ II
JESD-609 Code：e3
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：600mOhm
Terminal Finish：Matte Tin (Sn) - annealed
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Time@Peak Reflow Temperature-Max (s)：30
Base Part Number：STD10
Pin Count：3
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：70W
Turn On Delay Time：10 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：550m Ω @ 4A, 10V
Vgs(th) (Max) @ Id：4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：540pF @ 50V
Gate Charge (Qg) (Max) @ Vgs：19nC @ 10V
Rise Time：12ns
Vgs (Max)：±25V
Fall Time (Typ)：15 ns
Continuous Drain Current (ID)：10A
Threshold Voltage：3V
Gate to Source Voltage (Vgs)：25V
Drain Current-Max (Abs) (ID)：8A
Drain to Source Breakdown Voltage：600V
Avalanche Energy Rating (Eas)：200 mJ
Nominal Vgs：3 V
Height：2.4mm
Length：6.6mm
Width：6.2mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 4989

1+： $2.46990
10+： $2.33010
100+： $2.19820
500+： $2.07378
1000+： $1.95639

小計金額 $2.46990

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STD10NM60N