FQT4N20LTF

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-261-4, TO-261AA
Trans MOSFET N-CH 200V 0.85A 4-Pin(3 Tab) SOT-223 T/R
Date Sheet

在庫數 24000

1+： $1.05066
10+： $0.99118
100+： $0.93508
500+： $0.88215
1000+： $0.83222

小計金額 $1.05066

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 4 days ago)
Factory Lead Time：18 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-261-4, TO-261AA
Number of Pins：3
Weight：188mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：850mA Tc
Drive Voltage (Max Rds On, Min Rds On)：5V 10V
Number of Elements：1
Power Dissipation (Max)：2.2W Tc
Turn Off Delay Time：15 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：QFET®
Published：2001
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：4
ECCN Code：EAR99
Resistance：1.35Ohm
Voltage - Rated DC：200V
Terminal Position：DUAL
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：not_compliant
Current Rating：850mA
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
JESD-30 Code：R-PDSO-G4
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.2W
Case Connection：DRAIN
Turn On Delay Time：7 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：1.35 Ω @ 425mA, 10V
Vgs(th) (Max) @ Id：2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：310pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：5.2nC @ 5V
Rise Time：70ns
Vgs (Max)：±20V
Fall Time (Typ)：40 ns
Continuous Drain Current (ID)：850mA
Threshold Voltage：2V
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：0.85A
Drain to Source Breakdown Voltage：200V
Avalanche Energy Rating (Eas)：52 mJ
Height：1.6mm
Length：6.5mm
Width：3.56mm
REACH SVHC：No SVHC
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 24000

1+： $1.05066
10+： $0.99118
100+： $0.93508
500+： $0.88215
1000+： $0.83222

小計金額 $1.05066

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FQT4N20LTF