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FQP9N30
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- TO-220-3
- MOSFET N-CH 300V 9A TO-220
Date Sheet
在庫數 15399
小計金額 $0.00000
仕様 よくある質問
- Lifecycle Status：ACTIVE (Last Updated: 4 days ago)
- Factory Lead Time：9 Weeks
- Mount：Through Hole
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Number of Pins：3
- Weight：1.8g
- Transistor Element Material：SILICON
- Current - Continuous Drain (Id) @ 25℃：9A Tc
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Number of Elements：1
- Power Dissipation (Max)：98W Tc
- Turn Off Delay Time：27 ns
- Operating Temperature：-55°C~150°C TJ
- Packaging：Tube
- Series：QFET®
- Published：2013
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Terminal Finish：Tin (Sn)
- Voltage - Rated DC：300V
- Current Rating：9A
- Element Configuration：Single
- Operating Mode：ENHANCEMENT MODE
- Power Dissipation：98W
- Turn On Delay Time：16 ns
- FET Type：N-Channel
- Transistor Application：SWITCHING
- Rds On (Max) @ Id, Vgs：450m Ω @ 4.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds：750pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs：22nC @ 10V
- Rise Time：120ns
- Vgs (Max)：±30V
- Fall Time (Typ)：48 ns
- Continuous Drain Current (ID)：9A
- JEDEC-95 Code：TO-220AB
- Gate to Source Voltage (Vgs)：30V
- Drain Current-Max (Abs) (ID)：9A
- Drain-source On Resistance-Max：0.45Ohm
- Drain to Source Breakdown Voltage：300V
- Avalanche Energy Rating (Eas)：420 mJ
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
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