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STP7N95K3

在庫數 26

  • 1+: $3.31846
  • 10+: $3.13063
  • 100+: $2.95342
  • 500+: $2.78625
  • 1000+: $2.62853

小計金額 $3.31846

仕様 よくある質問
  • Factory Lead Time:12 Weeks
  • Mount:Through Hole
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Number of Pins:3
  • Transistor Element Material:SILICON
  • Current - Continuous Drain (Id) @ 25℃:7.2A Tc
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Number of Elements:1
  • Power Dissipation (Max):150W Tc
  • Turn Off Delay Time:36 ns
  • Voltage - Gate Threshold (Vgs(th)) (Max) @ Id:5V @ 100μA
  • Operating Temperature:-55°C~150°C TJ
  • Packaging:Tube
  • Series:SuperMESH3™
  • JESD-609 Code:e3
  • Part Status:ACTIVE (Last Updated: 7 months ago)
  • Moisture Sensitivity Level (MSL):1 (Unlimited)
  • Number of Terminations:3
  • ECCN Code:EAR99
  • Resistance:1.35Ohm
  • Terminal Finish:Matte Tin (Sn)
  • Base Part Number:STP7N
  • Element Configuration:Single
  • Operating Mode:ENHANCEMENT MODE
  • Power Dissipation:150W
  • Turn On Delay Time:14 ns
  • FET Type:N-Channel
  • Transistor Application:SWITCHING
  • Rds On (Max) @ Id, Vgs:1.35 Ω @ 3.6A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds:1031pF @ 100V
  • Gate Charge (Qg) (Max) @ Vgs:34nC @ 10V
  • Rise Time:9ns
  • Vgs (Max):±30V
  • Fall Time (Typ):23 ns
  • Continuous Drain Current (ID):7.2A
  • Threshold Voltage:4V
  • JEDEC-95 Code:TO-220AB
  • Gate to Source Voltage (Vgs):30V
  • Drain to Source Breakdown Voltage:950V
  • Pulsed Drain Current-Max (IDM):28.8A
  • Avalanche Energy Rating (Eas):220 mJ
  • Height:15.75mm
  • Length:10.4mm
  • Width:4.6mm
  • REACH SVHC:No SVHC
  • Radiation Hardening:No
  • RoHS Status:ROHS3 Compliant
  • Lead Free:Lead Free

在庫數 26

  • 1+: $3.31846
  • 10+: $3.13063
  • 100+: $2.95342
  • 500+: $2.78625
  • 1000+: $2.62853

小計金額 $3.31846

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