IRF540

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-220-3
MOSFET N-CH 100V 22A TO-220
Date Sheet

在庫數 133

小計金額 $0.00000

仕様よくある質問

Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-220-3
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：22A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：85W Tc
Turn Off Delay Time：50 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：4V @ 250μA
Operating Temperature：-55°C~175°C TJ
Packaging：Tube
Series：STripFET™ II
JESD-609 Code：e3
Part Status：Obsolete
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Terminal Finish：Matte Tin (Sn)
Voltage - Rated DC：100V
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Current Rating：22A
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
Base Part Number：IRF5
JESD-30 Code：R-PSFM-T3
Qualification Status：Not Qualified
Voltage：100V
Element Configuration：Single
Current：33A
Operating Mode：ENHANCEMENT MODE
Power Dissipation：85W
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：77m Ω @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds：870pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：41nC @ 10V
Rise Time：45ns
Vgs (Max)：±20V
Fall Time (Typ)：20 ns
Continuous Drain Current (ID)：22A
JEDEC-95 Code：TO-220AB
Gate to Source Voltage (Vgs)：20V
Drain-source On Resistance-Max：0.077Ohm
Drain to Source Breakdown Voltage：100V
Avalanche Energy Rating (Eas)：220 mJ
Turn Off Time-Max (toff)：230ns
REACH SVHC：not_compliant
RoHS Status：Non-RoHS Compliant
Lead Free：Contains Lead

在庫數 133

小計金額 $0.00000

Phone

IRF540