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IRF620
-
STMicroelectronics
-
Transistors - FETs, MOSFETs - Single
- TO-220-3
- MOSFET N-CH 200V 6A TO-220
Date Sheet
在庫數 71
小計金額 $0.00000
仕様 よくある質問
- Mount：Through Hole
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Number of Pins：3
- Transistor Element Material：SILICON
- Current - Continuous Drain (Id) @ 25℃：6A Tc
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Number of Elements：1
- Power Dissipation (Max)：70W Tc
- Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：4V @ 250μA
- Operating Temperature：-65°C~150°C TJ
- Packaging：Tube
- Series：PowerMESH™ II
- JESD-609 Code：e3
- Part Status：Obsolete
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Terminal Finish：Matte Tin (Sn)
- Additional Feature：FAST SWITCHING
- Voltage - Rated DC：200V
- Peak Reflow Temperature (Cel)：NOT SPECIFIED
- Current Rating：6A
- Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
- Base Part Number：IRF6
- Qualification Status：Not Qualified
- Element Configuration：Single
- Operating Mode：ENHANCEMENT MODE
- Power Dissipation：70W
- FET Type：N-Channel
- Transistor Application：SWITCHING
- Rds On (Max) @ Id, Vgs：800m Ω @ 3A, 10V
- Input Capacitance (Ciss) (Max) @ Vds：350pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs：27nC @ 10V
- Rise Time：30ns
- Vgs (Max)：±20V
- Continuous Drain Current (ID)：6A
- Threshold Voltage：4V
- JEDEC-95 Code：TO-220AB
- Gate to Source Voltage (Vgs)：20V
- Drain Current-Max (Abs) (ID)：6A
- Drain-source On Resistance-Max：0.8Ohm
- Drain to Source Breakdown Voltage：200V
- Pulsed Drain Current-Max (IDM)：24A
- Feedback Cap-Max (Crss)：80 pF
- REACH SVHC：not_compliant
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
在庫數 71
小計金額 $0.00000
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