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FCP130N60
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- TO-220-3
- N-Channel Power MOSFET, SUPERFET® II, FAST, 600 V, 28 A, 130 mO, TO-220
Date Sheet
在庫數 1000
- 1+: $5.93190
- 10+: $5.59613
- 100+: $5.27937
- 500+: $4.98054
- 1000+: $4.69862
小計金額 $5.93190
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 1 week ago)
- Factory Lead Time:12 Weeks
- Mount:Through Hole
- Mounting Type:Through Hole
- Package / Case:TO-220-3
- Weight:1.8g
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:28A Tc
- Drive Voltage (Max Rds On, Min Rds On):10V
- Number of Elements:1
- Power Dissipation (Max):278W Tc
- Turn Off Delay Time:65 ns
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tube
- Series:SuperFET® II
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Resistance:130mOhm
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
- JESD-30 Code:R-PSFM-T3
- Number of Channels:1
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Turn On Delay Time:25 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:130m Ω @ 14A, 10V
- Vgs(th) (Max) @ Id:3.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:3590pF @ 380V
- Gate Charge (Qg) (Max) @ Vgs:70nC @ 10V
- Rise Time:16ns
- Vgs (Max):±20V
- Fall Time (Typ):4 ns
- Continuous Drain Current (ID):28A
- JEDEC-95 Code:TO-220AB
- Gate to Source Voltage (Vgs):30V
- Drain to Source Breakdown Voltage:600V
- Pulsed Drain Current-Max (IDM):84A
- Avalanche Energy Rating (Eas):720 mJ
- RoHS Status:ROHS3 Compliant
在庫數 1000
- 1+: $5.93190
- 10+: $5.59613
- 100+: $5.27937
- 500+: $4.98054
- 1000+: $4.69862
小計金額 $5.93190
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