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IXTP2N80P
-
IXYS
-
Transistors - FETs, MOSFETs - Single
- TO-220-3
- MOSFET N-CH 800V 2A TO-220
Date Sheet
在庫數 31518
小計金額 $0.00000
仕様 よくある質問
- Factory Lead Time：8 Weeks
- Mount：Through Hole
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Transistor Element Material：SILICON
- Current - Continuous Drain (Id) @ 25℃：2A Tc
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Number of Elements：1
- Power Dissipation (Max)：70W Tc
- Turn Off Delay Time：53 ns
- Operating Temperature：-55°C~150°C TJ
- Packaging：Tube
- Series：PolarHV™
- Published：2006
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Obsolete
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- Terminal Finish：Matte Tin (Sn)
- Additional Feature：AVALANCHE RATED
- Peak Reflow Temperature (Cel)：NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
- Pin Count：3
- JESD-30 Code：R-PSFM-T3
- Qualification Status：Not Qualified
- Element Configuration：Single
- Operating Mode：ENHANCEMENT MODE
- Power Dissipation：70W
- Case Connection：DRAIN
- FET Type：N-Channel
- Transistor Application：SWITCHING
- Rds On (Max) @ Id, Vgs：6 Ω @ 1A, 10V
- Vgs(th) (Max) @ Id：5.5V @ 50μA
- Input Capacitance (Ciss) (Max) @ Vds：440pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs：10.6nC @ 10V
- Rise Time：35ns
- Vgs (Max)：±30V
- Fall Time (Typ)：28 ns
- Continuous Drain Current (ID)：2A
- JEDEC-95 Code：TO-220AB
- Gate to Source Voltage (Vgs)：30V
- Drain Current-Max (Abs) (ID)：2A
- Drain-source On Resistance-Max：6Ohm
- Drain to Source Breakdown Voltage：800V
- Pulsed Drain Current-Max (IDM)：4A
- Avalanche Energy Rating (Eas)：100 mJ
- RoHS Status：RoHS Compliant
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