NTB75N03RT4

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MOSFET N-CH 25V 9.7A D2PAK
Date Sheet

在庫數 700

小計金額 $0.00000

仕様よくある質問

Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：9.7A Ta 75A Tc
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：1.25W Ta 74.4W Tc
Turn Off Delay Time：18.4 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Published：2006
JESD-609 Code：e0
Part Status：Obsolete
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Terminal Finish：Tin/Lead (Sn/Pb)
HTS Code：8541.29.00.75
Voltage - Rated DC：25V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：240
Reach Compliance Code：not_compliant
Current Rating：75A
Time@Peak Reflow Temperature-Max (s)：30
Pin Count：3
JESD-30 Code：R-PSSO-G2
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：74.4W
Case Connection：DRAIN
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id：2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：1333pF @ 20V
Gate Charge (Qg) (Max) @ Vgs：13.2nC @ 10V
Vgs (Max)：±20V
Continuous Drain Current (ID)：75A
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：9.7A
Drain to Source Breakdown Voltage：25V
Pulsed Drain Current-Max (IDM)：225A
Avalanche Energy Rating (Eas)：71.7 mJ
RoHS Status：Non-RoHS Compliant
Lead Free：Contains Lead

在庫數 700

小計金額 $0.00000

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NTB75N03RT4