NTB23N03RT4G

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MOSFET N-CH 25V 23A D2PAK
Date Sheet

在庫數 20001

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：OBSOLETE (Last Updated: 4 days ago)
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：23A Ta
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：37.5W Tj
Turn Off Delay Time：9.9 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Published：2007
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Obsolete
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
Terminal Finish：Tin (Sn)
HTS Code：8541.29.00.95
Voltage - Rated DC：25V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Current Rating：23A
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
Pin Count：3
JESD-30 Code：R-PSSO-G2
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：37.5W
Case Connection：DRAIN
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：45m Ω @ 6A, 10V
Vgs(th) (Max) @ Id：2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：225pF @ 20V
Gate Charge (Qg) (Max) @ Vgs：3.76nC @ 4.5V
Rise Time：14.9ns
Vgs (Max)：±20V
Fall Time (Typ)：2 ns
Continuous Drain Current (ID)：23A
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：6A
Drain-source On Resistance-Max：0.06Ohm
Drain to Source Breakdown Voltage：25V
Pulsed Drain Current-Max (IDM)：60A
RoHS Status：RoHS Compliant
Lead Free：Lead Free

在庫數 20001

小計金額 $0.00000

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