NTB90N02T4

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MOSFET N-CH 24V 90A D2PAK
Date Sheet

在庫數 32363

小計金額 $0.00000

仕様よくある質問

Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：90A Ta
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：85W Tc
Turn Off Delay Time：28 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：3V @ 250μA
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Published：2009
JESD-609 Code：e0
Part Status：Obsolete
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Terminal Finish：Tin/Lead (Sn/Pb)
HTS Code：8541.29.00.95
Voltage - Rated DC：24V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：240
Current Rating：90A
Time@Peak Reflow Temperature-Max (s)：30
JESD-30 Code：R-PSSO-G2
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：85W
Case Connection：DRAIN
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：5.8m Ω @ 90A, 10V
Input Capacitance (Ciss) (Max) @ Vds：2120pF @ 20V
Gate Charge (Qg) (Max) @ Vgs：29nC @ 4.5V
Rise Time：90ns
Vgs (Max)：±20V
Fall Time (Typ)：60 ns
Continuous Drain Current (ID)：90A
Gate to Source Voltage (Vgs)：20V
Drain-source On Resistance-Max：0.0058Ohm
Drain to Source Breakdown Voltage：24V
Pulsed Drain Current-Max (IDM)：200A
Avalanche Energy Rating (Eas)：733 mJ
REACH SVHC：not_compliant
RoHS Status：Non-RoHS Compliant
Lead Free：Contains Lead

在庫數 32363

小計金額 $0.00000

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NTB90N02T4