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NTMS4101PR2
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- 8-SOIC (0.154, 3.90mm Width)
- MOSFET P-CH 20V 6.9A 8-SOIC
Date Sheet
在庫數 78000
小計金額 $0.00000
仕様 よくある質問
- Mount：Surface Mount
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154, 3.90mm Width)
- Number of Pins：8
- Transistor Element Material：SILICON
- Current - Continuous Drain (Id) @ 25℃：6.9A Ta
- Drive Voltage (Max Rds On, Min Rds On)：2.5V 4.5V
- Number of Elements：1
- Power Dissipation (Max)：1.38W Tj
- Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：450mV @ 250μA
- Operating Temperature：-55°C~150°C TJ
- Packaging：Tape & Reel (TR)
- Published：2004
- JESD-609 Code：e0
- Part Status：Obsolete
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：8
- Terminal Finish：Tin/Lead (Sn/Pb)
- HTS Code：8541.29.00.95
- Voltage - Rated DC：-20V
- Terminal Position：DUAL
- Terminal Form：GULL WING
- Peak Reflow Temperature (Cel)：NOT SPECIFIED
- Current Rating：-6.5A
- Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
- JESD-30 Code：R-PDSO-G8
- Qualification Status：Not Qualified
- Configuration：SINGLE WITH BUILT-IN DIODE
- Operating Mode：ENHANCEMENT MODE
- FET Type：P-Channel
- Transistor Application：SWITCHING
- Rds On (Max) @ Id, Vgs：19m Ω @ 6.9A, 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：3200pF @ 10V
- Gate Charge (Qg) (Max) @ Vgs：32nC @ 4.5V
- Drain to Source Voltage (Vdss)：20V
- Vgs (Max)：±8V
- Continuous Drain Current (ID)：6.9A
- Drain-source On Resistance-Max：0.019Ohm
- Pulsed Drain Current-Max (IDM)：30A
- REACH SVHC：not_compliant
- RoHS Status：Non-RoHS Compliant
- Lead Free：Contains Lead
在庫數 78000
小計金額 $0.00000
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