NTB4302T4

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MOSFET N-CH 30V 74A D2PAK
Date Sheet

在庫數 10000

小計金額 $0.00000

仕様よくある質問

Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：74A Tc
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：80W Tc
Turn Off Delay Time：32 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Published：2005
JESD-609 Code：e0
Part Status：Obsolete
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Terminal Finish：Tin/Lead (Sn/Pb)
Voltage - Rated DC：30V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：235
Reach Compliance Code：not_compliant
Current Rating：74A
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
Pin Count：3
JESD-30 Code：R-PSSO-G2
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：80W
Case Connection：DRAIN
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：9.3m Ω @ 37A, 10V
Vgs(th) (Max) @ Id：3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：2400pF @ 24V
Gate Charge (Qg) (Max) @ Vgs：28nC @ 4.5V
Rise Time：70ns
Vgs (Max)：±20V
Fall Time (Typ)：30 ns
Continuous Drain Current (ID)：74A
Gate to Source Voltage (Vgs)：20V
Drain-source On Resistance-Max：0.0093Ohm
Drain to Source Breakdown Voltage：30V
Pulsed Drain Current-Max (IDM)：175A
Avalanche Energy Rating (Eas)：722 mJ
RoHS Status：Non-RoHS Compliant
Lead Free：Contains Lead

在庫數 10000

小計金額 $0.00000

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NTB4302T4