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NTB4302G
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- MOSFET N-CH 30V 74A D2PAK
Date Sheet
在庫數 10000
小計金額 $0.00000
仕様 よくある質問
- Lifecycle Status:LAST SHIPMENTS (Last Updated: 2 days ago)
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Pins:3
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:74A Tc
- Drive Voltage (Max Rds On, Min Rds On):4.5V 10V
- Number of Elements:1
- Power Dissipation (Max):80W Tc
- Turn Off Delay Time:45 ns
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tube
- Published:2005
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Obsolete
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:2
- ECCN Code:EAR99
- Terminal Finish:Tin (Sn)
- Voltage - Rated DC:30V
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):260
- Current Rating:74A
- Time@Peak Reflow Temperature-Max (s):40
- Pin Count:3
- JESD-30 Code:R-PSSO-G2
- Qualification Status:Not Qualified
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:80W
- Case Connection:DRAIN
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:9.3m Ω @ 37A, 10V
- Vgs(th) (Max) @ Id:3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:2400pF @ 24V
- Gate Charge (Qg) (Max) @ Vgs:28nC @ 4.5V
- Rise Time:22ns
- Vgs (Max):±20V
- Fall Time (Typ):35 ns
- Continuous Drain Current (ID):74A
- Gate to Source Voltage (Vgs):20V
- Drain to Source Breakdown Voltage:30V
- Pulsed Drain Current-Max (IDM):175A
- Avalanche Energy Rating (Eas):722 mJ
- RoHS Status:RoHS Compliant
- Lead Free:Lead Free
在庫數 10000
小計金額 $0.00000
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