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NTD40N03RT4G
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ON Semiconductor
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Transistors - FETs, MOSFETs - Single
- TO-252-3, DPak (2 Leads + Tab), SC-63
- MOSFET N-CH 25V 7.8A DPAK
Date Sheet
在庫數 3200
小計金額 $0.00000
仕様 よくある質問
- Lifecycle Status:LAST SHIPMENTS (Last Updated: 2 days ago)
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins:4
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:7.8A Ta 32A Tc
- Drive Voltage (Max Rds On, Min Rds On):4.5V 10V
- Number of Elements:1
- Power Dissipation (Max):1.5W Ta 50W Tc
- Turn Off Delay Time:16.7 ns
- Operating Temperature:-55°C~175°C TJ
- Packaging:Tape & Reel (TR)
- Published:2005
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Obsolete
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:2
- ECCN Code:EAR99
- Resistance:12.6MOhm
- Terminal Finish:Tin (Sn)
- Voltage - Rated DC:25V
- Terminal Form:GULL WING
- Current Rating:40A
- Pin Count:4
- JESD-30 Code:R-PSSO-G2
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:2.1W
- Case Connection:DRAIN
- Turn On Delay Time:4.5 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:16.5m Ω @ 10A, 10V
- Vgs(th) (Max) @ Id:2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:584pF @ 20V
- Gate Charge (Qg) (Max) @ Vgs:5.78nC @ 4.5V
- Rise Time:19.5ns
- Vgs (Max):±20V
- Fall Time (Typ):3.5 ns
- Continuous Drain Current (ID):45A
- Gate to Source Voltage (Vgs):20V
- Drain Current-Max (Abs) (ID):32A
- Drain to Source Breakdown Voltage:25V
- Nominal Vgs:1.7 V
- REACH SVHC:Unknown
- Radiation Hardening:No
- RoHS Status:RoHS Compliant
- Lead Free:Lead Free
在庫數 3200
小計金額 $0.00000
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