STB85NF55T4

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MOSFET N-Ch 55 Volt 80 Amp
Date Sheet

在庫數 1900

1+： $2.74510
10+： $2.58972
100+： $2.44313
500+： $2.30484
1000+： $2.17438

小計金額 $2.74510

仕様よくある質問

Factory Lead Time：12 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：80A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：300W Tc
Turn Off Delay Time：70 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：4V @ 250μA
Operating Temperature：-55°C~175°C TJ
Packaging：Tape & Reel (TR)
Series：STripFET™ II
JESD-609 Code：e3
Part Status：ACTIVE (Last Updated: 7 months ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
Termination：SMD/SMT
ECCN Code：EAR99
Terminal Finish：Matte Tin (Sn) - annealed
Voltage - Rated DC：55V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：245
Current Rating：80A
Time@Peak Reflow Temperature-Max (s)：30
Base Part Number：STB85N
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：300W
Case Connection：DRAIN
Turn On Delay Time：25 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：8m Ω @ 40A, 10V
Input Capacitance (Ciss) (Max) @ Vds：3700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：150nC @ 10V
Rise Time：100ns
Vgs (Max)：±20V
Fall Time (Typ)：35 ns
Continuous Drain Current (ID)：40A
Threshold Voltage：3V
Gate to Source Voltage (Vgs)：20V
Drain-source On Resistance-Max：0.008Ohm
Drain to Source Breakdown Voltage：55V
Dual Supply Voltage：55V
Avalanche Energy Rating (Eas)：980 mJ
Nominal Vgs：3 V
Height：4.6mm
Length：10.4mm
Width：9.35mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 1900

1+： $2.74510
10+： $2.58972
100+： $2.44313
500+： $2.30484
1000+： $2.17438

小計金額 $2.74510

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STB85NF55T4