NTE2392

NTE Electronics, Inc.
Transistors - FETs, MOSFETs - Single
TO-204AA, TO-3
Power Field-Effect Transistor, 40A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TO-3, 2 PIN
Date Sheet

在庫數 632

小計金額 $0.00000

仕様よくある質問

Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-204AA, TO-3
Surface Mount：NO
Number of Pins：2 +Tab
Supplier Device Package：TO-3
Weight：72.574779 g
Number of Terminals：2
Transistor Element Material：SILICON
Manufacturer Part Number：NTE2392
Manufacturer：NTE Electronics
Continuous Drain Current：40(A)
Drain-Source On-Volt：100(V)
Operating Temperature Classification：Military
Package Type：TO-3
Operating Temp Range：-55C to 150C
Gate-Source Voltage (Max)：±20(V)
Channel Mode：Enhancement
Number of Elements：1
Rad Hardened：No
Mounting：Through Hole
RoHS：Non-Compliant
Turn Off Delay Time：125 ns
Package：Bag
Current - Continuous Drain (Id) @ 25℃：40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Mfr：NTE Electronics, Inc
Power Dissipation (Max)：150W (Tc)
Product Status：Active
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：4V @ 250µA
Package Description：FLANGE MOUNT, O-MBFM-P2
Package Style：FLANGE MOUNT
Package Body Material：METAL
Reflow Temperature-Max (s)：NOT SPECIFIED
Rohs Code：Yes
Turn-on Time-Max (ton)：135 ns
Package Shape：ROUND
Part Life Cycle Code：Active
Ihs Manufacturer：NTE ELECTRONICS INC
Turn-off Time-Max (toff)：225 ns
Risk Rank：1.6
Part Package Code：TO-204AA
Drain Current-Max (ID)：40 A
Operating Temperature：-55°C ~ 150°C (TJ)
Series：-
ECCN Code：EAR99
Type：Power MOSFET
Max Operating Temperature：150 °C
Min Operating Temperature：-55 °C
Subcategory：FET General Purpose Power
Max Power Dissipation：150 W
Technology：MOSFET (Metal Oxide)
Terminal Position：BOTTOM
Terminal Form：PIN/PEG
Peak Reflow Temperature (Cel)：NOT SPECIFIED
JESD-30 Code：O-MBFM-P2
Qualification Status：Not Qualified
Polarity：N
Configuration：SINGLE WITH BUILT-IN DIODE
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：150 W
Case Connection：DRAIN
Turn On Delay Time：35 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：55mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds：3000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs：120 nC @ 10 V
Drain to Source Voltage (Vdss)：100 V
Vgs (Max)：±20V
Polarity/Channel Type：N-CHANNEL
Continuous Drain Current (ID)：40 A
Threshold Voltage：4 V
JEDEC-95 Code：TO-3
Gate to Source Voltage (Vgs)：20 V
Drain Current-Max (Abs) (ID)：32 A
Drain-source On Resistance-Max：0.055 Ω
Drain to Source Breakdown Voltage：100 V
Pulsed Drain Current-Max (IDM)：160 A
DS Breakdown Voltage-Min：100 V
FET Technology：METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)：125 W
FET Feature：-
Drain to Source Resistance：55 mΩ
Nominal Vgs：4 V
Power Dissipation Ambient-Max：150 W
Width：22.1996 mm
Height：8.89 mm
Length：152.4 mm
REACH SVHC：Unknown

在庫數 632

小計金額 $0.00000

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NTE2392