FDB6644

Fairchild Semiconductor
Transistors - FETs, MOSFETs - Single
Power Field-Effect Transistor, 50A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
Date Sheet

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小計金額 $0.00000

仕様よくある質問

Surface Mount：YES
Number of Pins：3
Number of Terminals：2
Transistor Element Material：SILICON
RoHS：Non-Compliant
Turn Off Delay Time：54 ns
Package Description：D2PAK-3
Package Style：SMALL OUTLINE
Package Body Material：PLASTIC/EPOXY
Reflow Temperature-Max (s)：NOT SPECIFIED
Operating Temperature-Max：175 °C
Rohs Code：No
Manufacturer Part Number：FDB6644
Package Shape：RECTANGULAR
Manufacturer：Fairchild Semiconductor Corporation
Number of Elements：1
Part Life Cycle Code：Obsolete
Ihs Manufacturer：FAIRCHILD SEMICONDUCTOR CORP
Risk Rank：5.9
Part Package Code：D2PAK
Drain Current-Max (ID)：50 A
JESD-609 Code：e0
ECCN Code：EAR99
Terminal Finish：Tin/Lead (Sn/Pb)
Max Operating Temperature：175 °C
Min Operating Temperature：-65 °C
Subcategory：FET General Purpose Power
Terminal Position：SINGLE
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：NOT SPECIFIED
JESD-30 Code：R-PSSO-G2
Qualification Status：Not Qualified
Configuration：SINGLE WITH BUILT-IN DIODE
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：83 W
Case Connection：DRAIN
Transistor Application：SWITCHING
Rise Time：8 ns
Polarity/Channel Type：N-CHANNEL
Continuous Drain Current (ID)：50 A
JEDEC-95 Code：TO-263AB
Gate to Source Voltage (Vgs)：16 V
Drain Current-Max (Abs) (ID)：50 A
Drain-source On Resistance-Max：0.0105 Ω
Drain to Source Breakdown Voltage：30 V
Pulsed Drain Current-Max (IDM)：150 A
DS Breakdown Voltage-Min：30 V
Avalanche Energy Rating (Eas)：240 mJ
FET Technology：METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)：83 W
Drain to Source Resistance：8.5 mΩ
REACH SVHC：compliant

在庫數 0

小計金額 $0.00000

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FDB6644