STD12N60DM6

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET N-CH 600V 10A DPAK
Date Sheet

在庫數 2260

小計金額 $0.00000

仕様よくある質問

Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Supplier Device Package：D-PAK (TO-252)
Mfr：STMicroelectronics
Product Status：Active
Current - Continuous Drain (Id) @ 25℃：10A (Tc)
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：4.75V @ 250μA
Power Dissipation (Max)：90W (Tc)
Base Product Number：STD12
Number of Elements per Chip：1
Package Type：DPAK (TO-252)
MSL：MSL 1 - Unlimited
Qualification：-
Continuous Drain Current Id：10A
Vds - Drain-Source Breakdown Voltage：600 V
Vgs th - Gate-Source Threshold Voltage：4.75 V
Pd - Power Dissipation：90 W
Transistor Polarity：N-Channel
Maximum Operating Temperature：+ 150 C
Vgs - Gate-Source Voltage：- 25 V, + 25 V
Unit Weight：0.011640 oz
Minimum Operating Temperature：- 55 C
Factory Pack QuantityFactory Pack Quantity：2500
Mounting Styles：SMD/SMT
Channel Mode：Enhancement
Manufacturer：STMicroelectronics
Brand：STMicroelectronics
Qg - Gate Charge：17 nC
Tradename：MDmesh
Rds On - Drain-Source Resistance：390 mOhms
RoHS：Details
Id - Continuous Drain Current：10 A
Operating Temperature：-55°C ~ 150°C (TJ)
Packaging：MouseReel
Subcategory：MOSFETs
Number of Channels：1 Channel
Power Dissipation：90W
FET Type：N-Channel
Rds On (Max) @ Id, Vgs：390mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds：508 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
Drain to Source Voltage (Vdss)：600 V
Vgs (Max)：±25V
Product Type：MOSFET
Channel Type：N
FET Feature：-
Product Category：MOSFET

在庫數 2260

小計金額 $0.00000

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STD12N60DM6