APT77N60BC6

Microchip Technology
Transistors - FETs, MOSFETs - Single
TO-247-3
MOSFET FG, MOSFET, 600V, TO-247View in Development Tools Selector
Date Sheet

在庫數 9000

小計金額 $0.00000

仕様よくある質問

Package / Case：TO-247-3
Mount：Through Hole
Mounting Type：Through Hole
Surface Mount：NO
Number of Pins：3
Supplier Device Package：TO-247 [B]
Weight：38.000013 g
Number of Terminals：3
Transistor Element Material：SILICON
RoHS：Details
Mounting Styles：Through Hole
Transistor Polarity：N-Channel
Vds - Drain-Source Breakdown Voltage：600 V
Id - Continuous Drain Current：77 A
Rds On - Drain-Source Resistance：37 mOhms
Vgs - Gate-Source Voltage：- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage：3 V
Qg - Gate Charge：260 nC
Minimum Operating Temperature：- 55 C
Maximum Operating Temperature：+ 150 C
Pd - Power Dissipation：481 W
Channel Mode：Enhancement
Fall Time：8 ns
Factory Pack QuantityFactory Pack Quantity：1
Typical Turn-Off Delay Time：110 ns
Typical Turn-On Delay Time：18 ns
Unit Weight：0.211644 oz
Number of Elements：1
Turn Off Delay Time：110 ns
Package：Tube
Base Product Number：APT77N60
Current - Continuous Drain (Id) @ 25℃：77A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Mfr：Microchip Technology
Power Dissipation (Max)：481W (Tc)
Product Status：Active
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：3.6V @ 2.96mA
Package Description：FLANGE MOUNT, R-PSFM-T3
Package Style：FLANGE MOUNT
Package Body Material：PLASTIC/EPOXY
Operating Temperature-Max：150 °C
Rohs Code：Yes
Manufacturer Part Number：APT77N60BC6
Package Shape：RECTANGULAR
Part Life Cycle Code：Active
Ihs Manufacturer：MICROSEMI CORP
Risk Rank：2.25
Part Package Code：TO-247
Drain Current-Max (ID)：77 A
Packaging：Tube
Operating Temperature：-55°C ~ 150°C (TJ)
Series：CoolMOS™
JESD-609 Code：e1
Part Status：Production (Last Updated: 1 month ago)
ECCN Code：EAR99
Terminal Finish：TIN SILVER COPPER
Max Operating Temperature：150 °C
Min Operating Temperature：-55 °C
Additional Feature：AVALANCHE RATED, ULTRA-LOW RESISTANCE
Max Power Dissipation：481 W
Terminal Position：SINGLE
Terminal Form：THROUGH-HOLE
JESD-30 Code：R-PSFM-T3
Qualification Status：Not Qualified
Configuration：Single
Number of Channels：1 Channel
Operating Mode：ENHANCEMENT MODE
Power Dissipation：481 W
Case Connection：DRAIN
Turn On Delay Time：18 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：41mOhm @ 44.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds：13600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs：260 nC @ 10 V
Rise Time：27 ns
Drain to Source Voltage (Vdss)：600 V
Vgs (Max)：±20V
Polarity/Channel Type：N-CHANNEL
Continuous Drain Current (ID)：77 A
JEDEC-95 Code：TO-247
Gate to Source Voltage (Vgs)：20 V
Drain Current-Max (Abs) (ID)：77 A
Drain-source On Resistance-Max：0.041 Ω
Drain to Source Breakdown Voltage：600 V
Pulsed Drain Current-Max (IDM)：272 A
Input Capacitance：13.6 nF
DS Breakdown Voltage-Min：600 V
Avalanche Energy Rating (Eas)：1954 mJ
FET Technology：METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)：481 W
FET Feature：-
Drain to Source Resistance：37 mΩ
Rds On Max：41 mΩ
Height：5.31 mm
Length：21.46 mm
Width：16.26 mm
Radiation Hardening：No
REACH SVHC：compliant

在庫數 9000

小計金額 $0.00000

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APT77N60BC6