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APT5010B2VRG

在庫數 73

小計金額 $0.00000

仕様 よくある質問
  • Package / Case:TO-247-3
  • Mounting Type:Through Hole
  • Supplier Device Package:T-MAX™ [B2]
  • Unit Weight:0.211644 oz
  • Factory Pack QuantityFactory Pack Quantity:1
  • Channel Mode:Enhancement
  • Pd - Power Dissipation:520 W
  • Maximum Operating Temperature:+ 150 C
  • Minimum Operating Temperature:- 55 C
  • Qg - Gate Charge:470 nC
  • Vgs th - Gate-Source Threshold Voltage:2 V
  • Vgs - Gate-Source Voltage:- 30 V, + 30 V
  • Rds On - Drain-Source Resistance:100 mOhms
  • Id - Continuous Drain Current:47 A
  • Vds - Drain-Source Breakdown Voltage:500 V
  • Transistor Polarity:N-Channel
  • Mounting Styles:Through Hole
  • RoHS:Details
  • Continuous Drain Current Id:47
  • Package:Tube
  • Base Product Number:APT5010
  • Current - Continuous Drain (Id) @ 25℃:47A (Tc)
  • Mfr:Microchip Technology
  • Product Status:Active
  • Voltage - Gate Threshold (Vgs(th)) (Max) @ Id:4V @ 2.5mA
  • Packaging:Tube
  • Series:POWER MOS V®
  • Configuration:Single
  • Number of Channels:1 Channel
  • Power Dissipation:520
  • FET Type:N-Channel
  • Rds On (Max) @ Id, Vgs:100mOhm @ 500mA, 10V
  • Input Capacitance (Ciss) (Max) @ Vds:8900 pF @ 25 V
  • Gate Charge (Qg) (Max) @ Vgs:470 nC @ 10 V
  • Drain to Source Voltage (Vdss):500 V
  • Channel Type:N
  • FET Feature:-

在庫數 73

小計金額 $0.00000